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? AUIRLR024N auirlu024n v dss 55v r ds(on) max. 0.065 ?? i d 17a features ? advanced planar technology ? low on-resistance ? logic-level gate drive ? dynamic dv/dt rating ? 175c operating temperature ? fast switching ? fully avalanche rated ? repetitive avalanche allowed up to tjmax ? lead-free, rohs compliant ? automotive qualified * description specifically designed for automotive applications, this cellular design of hexfet? power mosfets utilizes the latest processing techniques to achiev e low on-resistan ce per silicon area. this benefit combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in automotive and a wide variety of other applications. 1 2015-10-29 hexfet? is a registered trademark of infineon. * qualification standards can be found at www.infineon.com ? automotive grade symbol parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 17 a i d @ t c = 100c continuous drain current, v gs @ 10v 12 i dm pulsed drain current ? 72 p d @t c = 25c maximum power dissipation 45 w linear derating factor 0.3 w/c v gs gate-to-source voltage 16 v e as single pulse avalanche energy (thermally limited) ? 68 mj i ar avalanche current ? 11 a e ar repetitive avalanche energy ? 4.5 mj dv/dt peak diode recovery dv/dt ? 5.0 v/ns t j operating junction and -55 to + 175 ? t stg storage temperature range c ? soldering temperature, for 10 seconds (1.6mm from case) 300 ? absolute maximum ratings stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress ratings only; and functional operation of the device at these or any other condition beyond thos e indicated in the specificatio ns is not implied. exposure to absolute-maximum-rated conditions for exte nded periods may affect device reliability. the thermal resistan ce and power dissipation ratings are measured under board mounted and still air conditions. ambient temperature (ta) is 25c, unle ss otherwise specified. thermal resistance ? symbol parameter typ. max. units r ? jc junction-to-case ??? 3.3 c/w r ? ja junction-to-ambient ( pcb mount) ? ??? 50 r ? ja junction-to-ambient ??? 110 d-pak AUIRLR024N i-pak auirlu024n base part number package type standard pack form quantity auirlu024n i-pak tube 75 auirlu024n AUIRLR024N d-pak tube 75 AUIRLR024N tape and reel left 3000 AUIRLR024Ntrl orderable part number g d s gate drain source g s d d s g d hexfet ? power mosfet
? auirlr/u024n 2 2015-10-29 notes: ? ? repetitive rati ng; pulse width limited by max. junction temperature. (see fig. 11) ? v dd = 25v, starting t j = 25c, l = 790h, r g = 25 ? , i as = 11a, v gs =10v. (see fig.12) ? i sd ?? 11a, di/dt ?? 290a/s, v dd ?? v (br)dss , t j ? 175c. ? pulse width ?? 300s; duty cycle ? 2%. ?? this is applied for i-pak, l s of d-pak is measured between lead and center of die contact . ? ?? uses irfz24n data and test conditions. ? ? when mounted on 1" square pcb (fr-4 or g-10 material). fo r recommended footprint and soldering techniques refer to application note #an-994 static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 55 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.061 ??? v/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance ??? ??? 0.065 v gs = 10v, i d = 10a ? ??? ??? 0.080 v gs = 5.0v, i d = 10a ? ??? ??? 0.110 v gs = 4.0v, i d = 9.0a ? v gs(th) gate threshold voltage 1.0 ??? 2.0 v v ds = v gs , i d = 250a gfs forward trans conductance 8.3 ??? ??? s v ds = 25v, i d = 11a ? i dss drain-to-source leakage current ??? ??? 25 a v ds = 55 v, v gs = 0v ??? ??? 250 v ds = 44v,v gs = 0v,t j =150c i gss gate-to-source forward leakage ??? ??? 100 na v gs = 16v gate-to-source reverse leakage ??? ??? -100 v gs = -16v dynamic electrical characteristics @ t j = 25c (unless otherwise specified) q g total gate charge ??? ??? 15 nc ? i d = 11a q gs gate-to-source charge ??? ??? 3.7 v ds = 44v q gd gate-to-drain charge ??? ??? 8.5 v gs = 5.0v, see fig 6 and 13 ?? t d(on) turn-on delay time ??? 7.1 ??? ns v dd = 28v t r rise time ??? 74 ??? i d = 11a t d(off) turn-off delay time ??? 20 ??? r g = 12 ???? v gs = 5.0v ? t f fall time ??? 29 ??? r d = 2.4 ??? see fig 10 ?? l d internal drain inductance ??? 4.5 ??? nh ? between lead, 6mm (0.25in.) l s internal source inductance ??? 7.5 ??? from package and center of die contact c iss input capacitance ??? 480 ??? pf ? v gs = 0v c oss output capacitance ??? 130 ??? v ds = 25v c rss reverse transfer capacitance ??? 61 ??? ? = 1.0mhz, see fig. 5 ? diode characteristics ? parameter min. typ. max. units conditions i s continuous source current ??? ??? 17 a mosfet symbol (body diode) showing the i sm pulsed source current ??? ??? 72 integral reverse (body diode) ??? p-n junction diode. v sd diode forward voltage ??? ??? 1.3 v t j = 25c,i s = 11a,v gs = 0v ?? t rr reverse recovery time ??? 60 90 ns t j = 25c ,i f = 11a q rr reverse recovery charge ??? 130 200 nc di/dt = 100a/s ?? t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) ????
? auirlr/u024n 3 2015-10-29 fig. 2 typical output characteristics fig. 3 typical transfer characteristics fig. 4 normalized on-resistance vs. temperature fig. 1 typical output characteristics 0.1 1 10 100 0.1 1 10 100 i , drain-to-source current (a) d v , drain-to-source voltage (v) ds a 20s pulse width t = 25c j vgs top 15v 12v 10v 8.0v 6.0v 4.0v 3.0v bottom 2.5v 2.5v 0.1 1 10 100 0.1 1 10 100 i , drain-to-source current (a) d v , drain-to-source voltage (v) ds a 20s pulse width t = 175c vgs top 15v 12v 10v 8.0v 6.0v 4.0v 3.0v bottom 2.5v 2.5v j 0.1 1 10 100 2345678910 t = 25c j gs v , gate-to-source voltage (v) d i , drain-to-source current (a) t = 175c j a v = 15v 20s pulse width ds 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 j t , junction temperature (c) r , drain-to-source on resistance ds(on) (normalized) v = 10v gs a i = 18a d
? auirlr/u024n 4 2015-10-29 fig 5. typical capacitance vs. drain-to-source voltage fig 6. typical gate charge vs. gate-to-source voltage ? fig 8. maximum safe operating area fig. 7 typical source-to-drain diode forward voltage 0 200 400 600 800 11 01 0 0 c, capacitance (pf) ds v , drain-to-source voltage (v) a v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss 0 3 6 9 12 15 048121620 q , total gate charge (nc) g v , gate-to-source voltage (v) gs a for test circuit see figure 13 v = 44v v = 28v i = 11a ds ds d 1 10 100 0.4 0.8 1.2 1.6 2.0 t = 25c j v = 0v gs v , source-to-drain voltage (v) i , reverse drain current (a) sd sd a t = 175c j 1 10 100 1000 1 10 100 v , drain-to-source voltage (v) ds i , drain current (a) operation in this area limited by r d ds(on) 10s 100s 1ms 10ms a t = 25c t = 175c single pulse c j
? auirlr/u024n 5 2015-10-29 fig 10a. switching time test circuit fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature fig 10b. switching time waveforms 25 50 75 100 125 150 175 0 5 10 15 20 t , case temperature ( c) i , drain current (a) c d 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 t , rectangular pulse duration (sec) 1 thjc d = 0.50 0.01 0.02 0.05 0.10 0.20 single pulse (thermal response) a thermal response (z ) p t 2 1 t dm notes: ? 1. duty factor d = t / t 2. peak t = p x z + t ??? ? 1 2 j dm thjc c ?? ?
? auirlr/u024n 6 2015-10-29 ? fig 12c. maximum avalanche energy vs. drain current fig 12a. unclamped inductive test circuit fig 12b. unclamped inductive waveforms r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v t p v (br)dss i as fig 13b. gate charge test circuit fig 13a. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr 0 20 40 60 80 100 120 140 25 50 75 100 125 150 175 j e , single pulse avalanche energy (mj) as a starting t , junction temperature (c) v = 25v i top 4.5a 7.8a bottom 11a dd d
? auirlr/u024n 7 2015-10-29 ? fig 14. peak diode recovery dv/dt test circuit for n-channel hexfet? power mosfets
? auirlr/u024n 8 2015-10-29 note: for the most current drawing please refer to ir website at http://www.irf.com/package/ d-pak (to-252aa) package outline (dimensions are shown in millimeters (inches)) ywwa xx ? xx date code y= year ww= work week aurlr024n lot code part number ir logo d-pak (to-252aa) part marking information
? auirlr/u024n 9 2015-10-29 ? i-pak (to-251aa) part marking information ywwa xx ? xx date code y= year ww= work week aurlu024n lot code part number ir logo i-pak (to-251aa) package outline (dimensions are shown in millimeters (inches) note: for the most current drawing please refer to ir website at http://www.irf.com/package/
? auirlr/u024n 10 2015-10-29 d-pak (to-252aa) tape & reel information (dimensions are shown in millimeters (inches)) note: for the most current drawing please refer to ir website at http://www.irf.com/package/ tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl notes : 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters ( inches ). 3. outline conforms to eia-481 & eia-541. notes : 1. outline conforms to eia-481. 16 mm 13 inch
? auirlr/u024n 11 2015-10-29 ? qualification information qualification level automotive (per aec-q101) comments: this part number(s) passed automotive qualification. infineon?s industrial and consumer qualification level is granted by extension of the higher automotive level. d-pak msl1 i-pak esd machine model class m2 (+/- 150v) ? aec-q101-002 human body model ? class h1a (+/- 500v) ? aec-q101-001 charged device model class c5 (+/- 2000v) ? aec-q101-005 rohs compliant yes moisture sensitivity level ? published by infineon technologies ag 81726 mnchen, germany ? infineon technologies ag 2015 all rights reserved. important notice the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (?beschaffenheitsgarantie?). with respect to any examples , hints or any typical values stated herein and/or any information regarding the application of the product, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any thi rd party. in addition, any information given in this document is subject to customer?s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer ?s products and any use of the product of infineon technologies in customer?s applications. the data contained in this document is exclusively intended for technically trai ned staff. it is the responsibility of customer?s technical departments to evaluate the suit ability of the product for the intended application and the completeness of the product information given in this document with respect to such application. for further information on the product, technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements products may contain danger ous substances. for information on the types in question please contact your nearest infineon technologies office. except as otherwise explicitly appr oved by infineon technologies in a written document signed by authorized representatives of infineon technologies, infineon technolog ies? products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. revision history date comments 10/29/2015 ?? updated datasheet with corporate template ?? corrected ordering table on page 1. ? highest passing voltage.

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